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| SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 SFF75N06M SFF75N06Z 75 AMP 60 VOLTS 15m N-CHANNEL POWER MOSFET TO-254 (M) TO-254Z (Z) DESIGNER'S DATA SHEET FEATURES: * * * * * * * * * * * * Advanced high-cell density withstands high energy Very low conduction and switching losses Fast recovery drain-to-source diode with soft recovery Rugged construction with poly silicon gate Ultra low RDS (on) and high transconductance Excellent high temperature stability Very fast switching speed Fast recovery and superior dv/dt performance Increased reverse energy capability Low input and transfer capacitance for easy paralleling Hermetically sealed package TX, TXV and Space Level screening available MAXIMUM RATINGS CHARACTERISTIC Drain to Source Voltage Drain to Gate Voltage (RGS = 1.0 m) ) Gate to Source Voltage Continuous Drain Current Operating and Storage Temperature Thermal Resistance, Junction to Case Total Device Dissipation @ TC = 25 C @ TC = 55oC o SYMBOL VDS VDG V GS ID Top & Tstg R JC PD VALUE 60 60 + 20 56 1/ -55 to +150 1 125 95 UNIT Volts Volts Volts Amps o C o C/W Watts CASE OUTLINE: TO-254 (Sufix M) Pin Out: Pin 1: Drain Pin 2: Source Pin 3: Gate CASE OUTLINE: TO-254Z (Sufix Z) Pin Out: Pin 1: Drain Pin 2: Source Pin 3: Gate Available with Glass or Ceramic Seals. Contact Facory for details. NOTE: All specifications are subject to change without notification. SCDs for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00311B SFF75N06M SFF75N06Z SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ELECTRICAL CHARACTERISTICS @ TJ =25oC (Unless Otherwise Specified) RATING Drain to Source Breakdown Voltage (VGS =0 V, ID = 250A) SYMBOL MIN TYP MAX UNIT BVDSS ID=37.5A ID=75A ID=37.5A 60 75 2 15 - 13 15 19 Drain to Source on State Resistance (VGS = 10 V,Tc = 150oC) RDS(on) ID(on) VGS(th) gfs IDSS 4.0 250 1000 +100 -100 120 17 64 27 66 100 60 1.4 150 2900 1100 275 V m A V On State Drain Current (VDS > ID(on) x RDS(on) Max, VGS = 10 V) 35 80 13 40 20 35 65 40 1.47 70 2600 700 260 Gate Threshold Voltage (VDS = VGS, ID = 250A) Forward Transconductance (VDS > ID(on) X RDS (on) Max, IDS=60% rated ID) Smho A nA Zero Gate Voltage Drain Current (VDS = 80% rated voltage, VGS = 0V) (VDS = 80% rated VDS, VGS = 0V, TA = 125oC) Gate to Source Leakage Forward Gate to Source Leakage Reverse Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off DelayTime Fall Time Diode Forvard Voltage (IS = rated ID, VGS = 0V, TJ = 25oC) At rated VGS VGS = 10 V 50% rated VDS Rated ID VDD =50% rated VDS 50% rated ID RG=6.2 IGSS Qg Qgs Qgd td (on) tr td (off) tf VSD nC nsec V nsec Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance TJ =25 C IF = 10 di/dt = 100A/sec VGS =0 Volts VDS =25 Volts f =1 MHz o trr QRR Ciss Coss Crss pF For thermal derating curves and other characteristic curves please contact SSDI Marketing Department. NOTES: 1/ Maximum current limited by package, die rated at 75A. |
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